sot-23-6l plastic-encapsulate mosfets CJL6601 p-channel and n-channel complementary mosfets general description the CJL6601 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the complementary mosfets form a high-speed power inverter and suitable fo r a multitude of applications. maximum ratings (t a =25 unless otherwise noted) value parameter symbol n-channel p-channel unit drain-source voltage v ds 30 -30 v gate-source voltage v gs 12 12 v continuous drain current (1) i d 3.4 -2.3 a pulsed drain current (2) i dm 30 -30 a power dissipation p d 0.35 0.35 w thermal resistance from junction to ambient (1) r ja 357 357 /w junction temperature t j 150 150 storage temperature t stg -55~+150 -55~+150 1.the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design.the current ratings is based on t 10s thermal rasistance rating. 2. repetitive rating,pulse with limited by junction temperature. so t -23-6l 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
n-channel mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br) dss v gs = 0v, i d =250a 30 v zero gate voltage drain current i dss v ds =24v,v gs = 0v 1 a gate-source leakage current (note1) i gss v gs =12v, v ds = 0v 100 na v gs =10v, i d =3a 60 m ? v gs =4.5v, i d =3a 75 m ? drain-source on-resistance (note1) r ds(on) v gs =2.5v, i d =2a 115 m ? forward tranconductance (note1) g fs v ds =5v, i d =3a 5 s gate threshold voltage v gs(th) v ds =v gs , i d =250a 0.6 1.4 v diode forward voltage (note1) v sd i s =1a,v gs =0v 1 v dynamic characteristics (note2) input capacitance c iss 390 pf output capacitance c oss 54.5 pf reverse transfer capacitance c rss v gs =0v,v ds =15v ,f =1mhz 41 pf gate resistance r g v gs =0v,v ds =0v,f =1mhz 3 ? switching characteristics (note2) turn-on delay time t d(on) 4 ns turn-on rise time t r 2 ns turn-off delay time t d(off) 22 ns turn-off fall time t f v gs =10v,v ds =15v, r l =5 ? ,r gen =6 ? 3 ns p-channel mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br) dss v gs = 0v, i d =-250a -30 v zero gate voltage drain current i dss v ds =-24v,v gs = 0v -1 a gate-source leakage current i gss v gs =12v, v ds = 0v 100 na v gs =-10v, i d =-2.3a 135 m ? v gs =-4.5v, i d =-2a 185 m ? drain-source on-resistance (note1) r ds(on) v gs =-2.5v, i d =-1a 265 m ? forward tranconductance (note1) g fs v ds =-5v, i d =-2.3a 5 s gate threshold voltage v gs(th) v ds =v gs , i d =-250a -0.6 -1.4 v diode forward voltage (note1) v ds i s =-1a,v gs =0v -1 v dynamic characteristics (note2) input capacitance c iss 409 pf output capacitance c oss 55 pf reverse transfer capacitance c rss v gs =0v,v ds =-15v,f =1mhz 42 pf gate resistance r g v gs =0v,v ds =0v,f =1mhz 12 ? switching characteristics ( note2) turn-on delay time t d(on) 13 ns turn-on rise time t r 10 ns turn-off delay time t d(off) 28 ns turn-off fall time t f v gs =-10v,v ds =-15v, r l =6 ? ,r gen =6 ? 13 ns notes : 1. pulse test : pulse width 300 s, duty cycle 0.5%. 2. guaranteed by design, not subject to production testing. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
